Substrate : SiO2
1. HMDS, 4000rpm
2. Photo AZ5214, 4000rpm, 90℃ 1min bake
3. Cr Mask -> 8 sec
4. MIF 500 -> 1min
5. DI Rinse
6. BOE, silox etching
7. DI Rinse ( > 1min)
8. Remove PR by Aceton (> 20min)
Etch rate : 100nm / min
Substrate : SiO2
1. HMDS, 4000rpm
2. Photo AZ5214, 4000rpm, 90℃ 1min bake
3. Cr Mask -> 8 sec
4. MIF 500 -> 1min
5. DI Rinse
6. BOE, silox etching
7. DI Rinse ( > 1min)
8. Remove PR by Aceton (> 20min)
Etch rate : 100nm / min